Carré

H. Abnavi MSc (Hamed)

Promovendus
EEMCS-EE-PE
Carré C2732
h.abnavi@utwente.nl
+31534897739
Visitekaartje

Expertises

  • Engineering

    • Breakdown Voltage
    • Active Device
    • Field Effect Transistors
    • Mode Field
    • Surface Field
    • Gate Oxide

  • Material Science

    • Metal-Oxide-Semiconductor Field-Effect Transistor
    • Silicon

Organisaties

Publicaties

2025

A New Silicon Accumulation-Mode Trench Bidirectional Switch (2025)IEEE Transactions on Electron Devices, 72(4), 1900-1906. Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3546582

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