M. Nunnenkamp MSc (Moritz)

Nunnenkamp, M. (2023). Ferroelectrics for GaN based High Power Devices. [PhD Thesis - Research UT, graduation UT, University of Twente]. University of Twente. https://doi.org/10.3990/1.9789036558181

Nunnenkamp, M. (2022). Thickness influence of SrTiO3 buffer on CNO nanosheet templated PZT for High electron mobility transistor devices. Poster session presented at 28th International Workshop on Electronic Oxides, iWOE 2022, Portland, Maine, United States.

Nunnenkamp, M. , van den Nieuwenhuijzen, K. J. H. , & ten Elshof, J. E. (2022). Multilayer films of exfoliated 2D oxide nanosheets by electrospray deposition. Scientific reports, 12(1), Article 8673. Advance online publication. https://doi.org/10.1038/s41598-022-12768-3

Zhou, R. , Li, L., Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). Article 9170173 (International Symposium on Power Semiconductor Devices and ICs (ISPSD); Vol. 2020). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173