dr. A.Y. Kovalgin (Alexey)

Engineering & Materials Science

# Atomic Layer Deposition
# Spectroscopic Ellipsometry
# Tungsten
# Wire

Chemistry

# Atomic Layer Epitaxy
# Liquid Film
# Tungsten

Physics & Astronomy

# Atomic Layer Epitaxy

Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), Integrated Devices and Systems (IDS)

Ochapski, M. W. , Ataç, D. , Sanderink, J. G. M. , Kovalgin, A. Y. , & de Jong, M. P. (2021). Li intercalation into multilayer graphene with controlled defect densities. Carbon trends, 4, [100045]. https://doi.org/10.1016/j.cartre.2021.100045

Apaydin, R. O. , Onnink, A. J. , Liu, X. , Aarnink, A. A. I. , de Jong, M. P. , Gravesteijn, D. J. , & Kovalgin, A. Y. (2020). Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia. Journal of vacuum science and technology A: vacuum, surfaces, and films, 38(3), [033411]. https://doi.org/10.1116/6.0000132

Ataç, D. , Sanderink, J. G. M., Kinge, S. , Gravesteijn, D. J. , Kovalgin, A. Y. , & de Jong, M. P. (2020). Large scale structures in chemical vapor deposition-grown graphene on Ni thin films. Thin solid films, 709, [138225]. https://doi.org/10.1016/j.tsf.2020.138225

Onnink, A. J. , Apaydin, R. O. , Aarnink, A. A. I. , de Jong, M. P. , Gravesteijn, D. J. , & Kovalgin, A. Y. (2020). Study of the phase nature of boron- and nitrogen-containing films by optical and photoelectron spectroscopy. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 38(4), [044009]. https://doi.org/10.1116/6.0000193

Apaydin, R. O. (2020). Thermal and radical enhanced atomic layer deposition of films containing boron, nitrogen and carbon. [PhD Thesis - Research UT, graduation UT, University of Twente]. University of Twente. https://doi.org/10.3990/1.9789036549806

van der Zouw, K. , Aarnink, A. A. I. , Schmitz, J. , & Kovalgin, A. Y. (2020). Conduction and electric field effect in ultra-thin tungsten films. IEEE Transactions on Semiconductor Manufacturing, 33(2), 202-209. [9016070]. https://doi.org/10.1109/TSM.2020.2976886

Banerjee, S. , Aarnink, A. , & Kovalgin, A. (2020). Method of forming a device structure using selective deposition of gallium nitride and system for same. (Patent No. 62/779684). https://www.freepatentsonline.com/y2020/0194253.html

Onnink, A. J. , Apaydin, R. O. , Schmitz, J. , & Kovalgin, A. Y. (2019). In-situ study of ammonium bromide formation for optimizing boron nitride ALD from BBr3 and NH3. Abstract from EuroCVD 22 Baltic ALD 16 |2019, Luxembourg, Luxembourg.

Banerjee, S. , Aarnink, A. A. I. , Gravesteijn, D. J. , & Kovalgin, A. Y. (2019). Thermal Atomic Layer Deposition of Polycrystalline Gallium Nitride. The Journal of physical chemistry part C, 123(37), 23214-23225. https://doi.org/10.1021/acs.jpcc.9b05946

Banerjee, S. (2019). From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides. [PhD Thesis - Research UT, graduation UT, University of Twente]. University of Twente. https://doi.org/10.3990/1.9789036548250

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+31534892841

+31534897539 (bij geen gehoor)

a.y.kovalgin@utwente.nl

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Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré (gebouwnr. 15), kamer C2609
Hallenweg 23
7522NH Enschede

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Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré C2609
Postbus 217
7500 AE Enschede

Faculty of Electrical Engineering, Mathematics and Computer Science (EEMCS), Integrated Devices and Systems (IDS)

Universiteit Twente Drienerlolaan 5
7522 NB Enschede

+31 (0)53 489 9111
info@utwente.nl
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