C. Steenge MSc | People pages: Vind een medewerker en alle contactgegevens

Expertises

Material Science
- Silicon
- Anisotropic Etching
- Metal-Oxide-Semiconductor Field-Effect Transistor
- Surface (Surface Science)
Engineering
- Breakdown Voltage
- Active Device
- Mode Field
- Surface Field

Accumulation-mode SiC Trench MOSFET (2025)In 2025 17th International Seminar on Power Semiconductors (ISPS) (pp. 1-7). IEEE. Abnavi, H., Steenge, C., Dulfer, S. D., Berenschot, E. J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/ISPS65707.2025.11189975A New Silicon Accumulation-Mode Trench Bidirectional Switch (2025)IEEE Transactions on Electron Devices, 72(4), 1900-1906. Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3546582

Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning (2024)Journal of Vacuum Science and Technology B, 42(6). Article 062805. Pordeli, Y., Steenge, C., Berenschot, E. J. W., Hueting, R. J. E., Migliorini, A., Parkin, S. S. P. & Tas, N. R.https://doi.org/10.1116/6.00040243D self-aligned nano junctions in silicon fractals (2024)[Contribution to conference › Poster] MESA+ Meeting 2024. Steenge, C., Dawood, F., van der Zouw, K., Kooijman, L. J., Berenschot, E. J. W., Hueting, R. J. E. & Tas, N. R.

Self-aligned fabrication of nanomechanical and nanoelectronic devices by convex corner lithography on silicon wedges (2023)[Contribution to conference › Paper] 8th International Workshop on Nanotechnology and Application, IWNA 2023. Steenge, C., Kooijman, L., van Kampen, C., Borgelink, B., Janssens, Y., Pordeli, Y., Tiggelaar, R., Berenschot, E. & Tas, N.

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