Expertises
Material Science
- Silicon
- Anisotropic Etching
- Surface (Surface Science)
- Silicon Nitride
Engineering
- Active Device
- Breakdown Voltage
- Mode Field
- Surface Field
Organisaties
Publicaties
2025
A New Silicon Accumulation-Mode Trench Bidirectional Switch (2025)IEEE Transactions on Electron Devices, 72(4), 1900-1906. Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3546582
2024
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning (2024)Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 42(6). Article 062805. Pordeli, Y., Steenge, C., Berenschot, E. J. W., Hueting, R. J. E., Migliorini, A., Parkin, S. S. P. & Tas, N. R.https://doi.org/10.1116/6.0004024
2023
Self-aligned fabrication of nanomechanical and nanoelectronic devices by convex corner lithography on silicon wedges (2023)[Contribution to conference › Paper] 8th International Workshop on Nanotechnology and Application, IWNA 2023. Steenge, C., Kooijman, L., van Kampen, C., Borgelink, B., Janssens, Y., Pordeli, Y., Tiggelaar, R., Berenschot, E. & Tas, N.
Onderzoeksprofielen
Adres
Universiteit Twente
Carré (gebouwnr. 15), kamer C1510
Hallenweg 23
7522 NH Enschede
Universiteit Twente
Carré C1510
Postbus 217
7500 AE Enschede
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