Welkom...

prof.dr. D.J. Gravesteijn (Dirk)

Gast Ondersteunend en beheerspersoneel

Expertises

Physics & Astronomy
Cultured Cells
Gallium Nitrides
Random Access Memory
Engineering & Materials Science
Atomic Layer Deposition
Ferroelectric Materials
Gallium Nitride
Lead Zirconate Titanate
Chemistry
Liquid Film

Publicaties

Recent
Zhou, R. , Li, L., Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). Article 9170173 (International Symposium on Power Semiconductor Devices and ICs (ISPSD); Vol. 2020). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173
Banerjee, S. (2019). From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides. [PhD Thesis - Research UT, graduation UT, University of Twente]. University of Twente. https://doi.org/10.3990/1.9789036548250

Pure Link

Contactgegevens

Bezoekadres

Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré (gebouwnr. 15)
Hallenweg 21
7522NH  Enschede

Navigeer naar locatie

Postadres

Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré
Postbus 217
7500 AE Enschede