Carré

dr.ir. E.P. Houwman (Evert)

Onderzoeker
TNW-NEM-IMS
TNW-EDU-CSE
Carré C3215
e.p.houwman@utwente.nl
+31534892055
Visitekaartje

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Expertises

  • Material Science

    • Thin Films
    • Ferroelectric Material
    • Piezoelectricity
    • Devices
    • Capacitor
    • Film

  • Physics

    • Ferroelectricity
    • Substrates

Organisaties

Publicaties

2024
Toward Design Rules for Multilayer Ferroelectric Energy Storage Capacitors – A Study Based on Lead-Free and Relaxor-Ferroelectric/Paraelectric Multilayer Devices, Article 2402070. Nguyen, M. D., Houwman, E. P., Birkhölzer, Y. A., Vu, H. N., Koster, G. & Rijnders, G.https://doi.org/10.1002/adma.202402070Revealing the effect of the Schottky barrier on the energy storage performance of ferroelectric multilayers, Article 173758. Sun, Z., Houwman, E. P., Wang, S., Nguyen, M. D., Koster, G. & Rijnders, G.https://doi.org/10.1016/j.jallcom.2024.173758Using a perovskite oxide buffer layer on Ca2Nb3O10 nanosheets for the epitaxial growth of Pb(Zr0.52Ti0.48)O3 for electrode-free thin films, Article 140190. Nunnenkamp, M., Perez, D., Smithers, M., Houwman, E., Rijnders, G. & Koster, G.https://doi.org/10.1016/j.tsf.2023.140190
2023
Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors, Article 101129. Sun, Z., Huang, S., Zhu, W., Birkhölzer, Y. A., Gao, X., Avila, R. A., Huang, H., Lou, X., Houwman, E. P., Nguyen, M. D., Koster, G. & Rijnders, G.https://doi.org/10.1063/5.0170098Effect of a niobium-doped PZT interfacial layer thickness on the properties of epitaxial PMN-PT thin films, Article 145302. Boota, M., Houwman, E. P., Lanzara, G. & Rijnders, G.https://doi.org/10.1063/5.0139426On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Si, Article 275. Ni, S., Houwman, E., Koster, G. & Rijnders, G.https://doi.org/10.1007/s00339-023-06447-x
2022
Relaxor ferroelectric PMN-PT thin films for low hysteretic microelectronic devices. University of Twente. Ni, S.https://doi.org/10.3990/1.9789036554640Enhancing the Energy-Storage Density and Breakdown Strength in PbZrO3/Pb0.9La0.1Zr0.52Ti0.48O3-Derived Antiferroelectric/Relaxor-Ferroelectric Multilayers, Article 2200517. Nguyen, M. D., Birkhölzer, Y. A., Houwman, E. P., Koster, G. & Rijnders, G.https://doi.org/10.1002/aenm.202200517Interface-induced effects on the polarization response of epitaxial ferroelectric thin films—an experimental study and theoretical analysisIn Epitaxial Growth of Complex Metal Oxides: Second Edition (pp. 137-155). Elsevier. Houwman, E. P., Okkerman, L., Do, M. T., Koster, G. & Rijnders, G.https://doi.org/10.1016/B978-0-08-102945-9.00001-0
2021
Describing Hysteresis for Non-Switching Fields in Epitaxial Monoclinic PZT Films Using Polarization Rotation Model. Lucke, P., Bayraktar, M., Yakshin, A., Rijnders, A. J. H. M., Bijkerk, F. & Houwman, E. P.

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