Carré

dr.ir. E.P. Houwman (Evert)

Onderzoeker
TNW-NEM-IMS
TNW-EDU-CSE
Carré C3215
e.p.houwman@utwente.nl
+31534892055
Visitekaartje

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Expertises

  • Material Science

    • Thin Films
    • Ferroelectric Material
    • Piezoelectricity
    • Film
    • Devices
    • Capacitor

  • Physics

    • Ferroelectricity
    • Substrates

Organisaties

Publicaties

2024

Enhanced Piezoelectricity by Polarization Rotation through Thermal Strain Manipulation in PbZr0.6Ti0.4O3 Thin Films (2024)Advanced materials interfaces, 11(19). Article 2400048. Huang, S., Houwman, E., Gauquelin, N., Orekhov, A., Chezganov, D., Verbeeck, J., Hu, S., Zhong, G., Koster, G. & Rijnders, G.https://doi.org/10.1002/admi.202400048Toward Design Rules for Multilayer Ferroelectric Energy Storage Capacitors – A Study Based on Lead-Free and Relaxor-Ferroelectric/Paraelectric Multilayer Devices (2024)Advanced materials, 36(26). Article 2402070. Nguyen, M. D., Houwman, E. P., Birkhölzer, Y. A., Vu, H. N., Koster, G. & Rijnders, G.https://doi.org/10.1002/adma.202402070Revealing the effect of the Schottky barrier on the energy storage performance of ferroelectric multilayers (2024)Journal of alloys and compounds, 981. Article 173758. Sun, Z., Houwman, E. P., Wang, S., Nguyen, M. D., Koster, G. & Rijnders, G.https://doi.org/10.1016/j.jallcom.2024.173758Stabilizing Perovskite Pb(Mg0.33Nb0.67)O3-PbTiO3 Thin Films by Fast Deposition and Tensile Mismatched Growth Template (2024)ACS applied materials & interfaces, 16(10), 12744-12753. Ni, S., Houwman, E., Gauquelin, N., Chezganov, D., Van Aert, S., Verbeeck, J., Rijnders, G. & Koster, G.https://doi.org/10.1021/acsami.3c16241Using a perovskite oxide buffer layer on Ca2Nb3O10 nanosheets for the epitaxial growth of Pb(Zr0.52Ti0.48)O3 for electrode-free thin films (2024)Thin solid films, 790. Article 140190. Nunnenkamp, M., Perez, D., Smithers, M., Houwman, E., Rijnders, G. & Koster, G.https://doi.org/10.1016/j.tsf.2023.140190

2023

Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors (2023)APL materials, 11(10). Article 101129. Sun, Z., Huang, S., Zhu, W., Birkhölzer, Y. A., Gao, X., Avila, R. A., Huang, H., Lou, X., Houwman, E. P., Nguyen, M. D., Koster, G. & Rijnders, G.https://doi.org/10.1063/5.0170098Effect of a niobium-doped PZT interfacial layer thickness on the properties of epitaxial PMN-PT thin films (2023)Journal of Applied Physics, 133(14). Article 145302. Boota, M., Houwman, E. P., Lanzara, G. & Rijnders, G.https://doi.org/10.1063/5.0139426On the importance of the SrTiO3 template and the electronic contact layer for the integration of phase-pure low hysteretic Pb(Mg0.33Nb0.67)O3-PbTiO3 layers with Si (2023)Applied physics A: Materials science and processing, 129(4). Article 275. Ni, S., Houwman, E., Koster, G. & Rijnders, G.https://doi.org/10.1007/s00339-023-06447-x

2022

Relaxor ferroelectric PMN-PT thin films for low hysteretic microelectronic devices (2022)[Thesis › PhD Thesis - Research UT, graduation UT]. University of Twente. Ni, S.https://doi.org/10.3990/1.9789036554640Enhancing the Energy-Storage Density and Breakdown Strength in PbZrO3/Pb0.9La0.1Zr0.52Ti0.48O3-Derived Antiferroelectric/Relaxor-Ferroelectric Multilayers (2022)Advanced energy materials, 12(29). Article 2200517. Nguyen, M. D., Birkhölzer, Y. A., Houwman, E. P., Koster, G. & Rijnders, G.https://doi.org/10.1002/aenm.202200517

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