Welkom...

prof.dr.ir. G. Koster (Gertjan)

Hoogleraar

Over mij

Expertises

Engineering & Materials Science
Epitaxial Growth
Ferroelectric Materials
Heterojunctions
Oxides
Perovskite
Pulsed Laser Deposition
Substrates
Thin Films

Publicaties

Recent
Chen, B. , Gauquelin, N., Strkalj, N. , Huang, S. , Halisdemir, U. , Nguyen, M. D., Jannis, D., Sarott, M. F., Eltes, F., Abel, S., Spreitzer, M., Fiebig, M., Trassin, M., Fompeyrine, J., Verbeeck, J. , Huijben, M. , Rijnders, G. , & Koster, G. (2022). Signatures of enhanced out-of-plane polarization in asymmetric BaTiO3 superlattices integrated on silicon. Nature communications, 13(1), [265]. https://doi.org/10.1038/s41467-021-27898-x
Uemura, Y. , Ismail, A. S. M., Park, S. H., Kwon, S., Kim, M., Niwa, Y., Wadati, H., Elnaggar, H., Frati, F., Haarman, T., Höppel, N., Huse, N., Hirata, Y., Zhang, Y., Yamagami, K., Yamamoto, S., Matsuda, I., Katayama, T., Togashi, T., ... De Groot, F. M. F. (2021). Femtosecond Charge Density Modulations in Photoexcited CuWO4. Journal of physical chemistry C, 125(13), 7329-7336. https://doi.org/10.1021/acs.jpcc.0c10525
Birkhölzer, Y. A. , Sotthewes, K. , Koster, G. , & Rijnders, A. J. H. M. (2021). Nanoscale Manipulation of VO2 thin films. Poster session presented at 27th International Workshop on Oxide Electronics, iWOE27, Genoa, Italy.
Antoja-Lleonart, J., Ocelík, V., Zhou, S. , de Hond, K. , Koster, G. , Rijnders, G., & Noheda, B. (2021). Growth and crystallization of sio2/geo2 thin films on si(100) substrates. Nanomaterials, 11(7), [1654]. https://doi.org/10.3390/nano11071654
Green, R. J., Zabolotnyy, V., Zwiebler, M. , Liao, Z., Macke, S., Sutarto, R., He, F. , Huijben, M. , Rijnders, G. , Koster, G., Geck, J., Hinkov, V., & Sawatzky, G. A. (2021). Intrinsic versus extrinsic orbital and electronic reconstructions at complex oxide interfaces. Physical Review Materials , 5(6), [065004]. https://doi.org/10.1103/PhysRevMaterials.5.065004
Spreitzer, M., Klement, D., Parkelj Potocnik, T., Trstenjak, U., Jovanovic, Z. , Nguyen, M. D. , Yuan, H. , ten Elshof, J. E. , Houwman, E. , Koster, G. , Rijnders, G., Fompeyrine, J., Kornblum, L., Fenning, D. P., Liang, Y., Tong, W. Y., & Ghosez, P. (2021). Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. APL materials, 9(4), [040701]. https://doi.org/10.1063/5.0039161
Belhadi, J. , Gabor, U., Uršič, H., Daneu, N., Kim, J., Tian, Z. , Koster, G., Martin, L. W., & Spreitzer, M. (2021). Growth mode and strain effect on relaxor ferroelectric domains in epitaxial 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3/SrRuO3 heterostructures. RSC advances, 11(3), 1222-1232. https://doi.org/10.1039/d0ra10107a
Chen, B. , Gauquelin, N., Green, R. J. , Lee, J. H., Piamonteze, C., Spreitzer, M., Jannis, D., Verbeeck, J., Bibes, M. , Huijben, M. , Rijnders, G. , & Koster, G. (2021). Spatially Controlled Octahedral Rotations and Metal-Insulator Transitions in Nickelate Superlattices. Nano letters, 21(3), 1295-1302. https://doi.org/10.1021/acs.nanolett.0c03850
Zhou, R. , Li, L. , Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2020-September). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173
Do, M. T. , Houwman, E. P. , Gauquelin, N. , Nguyen, D. M. , Wang, J. , Bégon-Lours, L. C., Blom, F. , Koster, G. , & Rijnders, A. J. H. M. (2020). Mechanisms for polarization fatigue in ferroelectric epitaxial film. Poster session presented at Physics@Veldhoven 2020, veldhoven, Netherlands.
Chen, B. , Gauquelin, N., Jannis, D. , Cunha, D. M. , Halisdemir, U., Piamonteze, C., Lee, J. H., Belhadi, J., Eltes, F., Abel, S., Jovanovic, Z., Spreitzer, M., Fompeyrine, J., Verbeeck, J., Bibes, M. , Huijben, M. , Rijnders, G. , & Koster, G. (2020). Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. Advanced materials, 32(50), [2004995]. https://doi.org/10.1002/adma.202004995

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Onderwijs

Committees:

  • Onderwijskwaliteitcommissie Advanced Technology (2010-1012)
  • Examencommissie Advanced Technology (2012-2016)
  • Onderwijscommissie AT (2016-)

Verbonden aan Opleidingen

Bachelor

Master

Vakken Collegejaar  2021/2022

Vakken in het huidig collegejaar worden toegevoegd op het moment dat zij definitief zijn in het Osiris systeem. Daarom kan het zijn dat de lijst nog niet compleet is voor het gehele collegejaar.
 

Vakken Collegejaar  2020/2021

In de Pers

2016

2014

2013

2012

2011

2010

2009

2008

  •  Kunstkristalbouwer nummer drie by Henk Klomp, Technisch Weekblad no. 9 (in dutch); COMAT system

2007

  • Monitoring-and Possibly Improving-Superconducting Films by Hang Hogan, Spectroscopy Focus, September, pg 107; on APL 90 (2007) 261917
  • Watch out for the lack of oxygen by James N. Eckstein, Nature Materials (News and Views), 6 473; PRL 98 (2007) 196802
  • Evidence suggests that a ferromagnetic metal may lie at the interface between nonmagnetic insulatorsby B.G. Levi, Physics Today, June; PRL 98 (2007) 196802

Contactgegevens

Bezoekadres

Universiteit Twente
Faculty of Science and Technology
Carré (gebouwnr. 15), kamer C3247
Hallenweg 23
7522NH  Enschede

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Postadres

Universiteit Twente
Faculty of Science and Technology
Carré  C3247
Postbus 217
7500 AE Enschede