ir. J.D. Verbakel (Jort) | Universiteit Twente

Engineering & Materials Science

# Aluminum Oxide
# Atomic Layer Deposition
# Etching
# Graphene

Physics & Astronomy

# Graphene
# Valleys

Chemistry

# Aluminium Oxide
# Graphene

Faculty of Science and Technology (TNW), Physics of Interfaces and Nanomaterials (PIN)

Zandvliet, H. J. W. , Verbakel, J. D. , Yao, Q. , Sotthewes, K. , & Bampoulis, P. (2021). Topologically protected one-dimensional electronic states in group IV two-dimensional Dirac materials. ArXiv.org. http://arxiv.org/abs/2109.03071v1

Kizir, S. , van den Beld, W. T. E. , Verbakel, J. D. , Pushkarev, R. , Houweling, Z. S. , van de Kruijs, R. W. E. , Benschop, J. P. H. , & Bijkerk, F. (2021). Hydrogen etch resistance of aluminium oxide passivated graphitic layers. Journal of physics D: applied physics, 54(50), [505304]. https://doi.org/10.1088/1361-6463/ac2200

Verbakel, J. D. , Yao, Q. , Sotthewes, K. , & Zandvliet, H. J. W. (2021). Valley-protected one-dimensional states in small-angle twisted bilayer graphene. Physical review B: Covering condensed matter and materials physics, 103(16), [165134]. https://doi.org/10.1103/PhysRevB.103.165134

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j.d.verbakel@utwente.nl

Bezoekadres

Universiteit Twente
Faculty of Science and Technology
Carré (gebouwnr. 15)
Hallenweg 23
7522NH Enschede

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Postadres

Universiteit Twente
Faculty of Science and Technology
Carré
Postbus 217
7500 AE Enschede

Faculty of Science and Technology (TNW), Physics of Interfaces and Nanomaterials (PIN)

Universiteit Twente Drienerlolaan 5
7522 NB Enschede

+31 (0)53 489 9111
info@utwente.nl
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