dr.ir. R.J.E. Hueting (Ray)

Universitair hoofddocent


Engineering & Materials Science
Ferroelectric Materials
Lead Zirconate Titanate
Light Emitting Diodes
Physics & Astronomy
Light Emitting Diodes


Alimawi, M. , Koch, P., Venugopal, P. , & Hueting, R. (2023). Reconfigurable Double Pulse Test Setup for Si and Wide Bandgap Power FETs. In PCIM Europe 2023; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management https://doi.org/10.30420/566091165
Wang, L. , Wang, W. , Hueting, R. J. E., Rietveld, G., & Ferreira, J. A. (2023). Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging. IEEE transactions on power electronics, 38(1), 472-490. https://doi.org/10.1109/TPEL.2022.3200469
Hueting, R. J. E. , & Gupta, G. (2022). Electrostatic Doping and Devices. In M. Rudan, R. Brunetti, & S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 371-389). (Springer Handbooks). Springer. https://doi.org/10.1007/978-3-030-79827-7_11
Wang, L. , Wang, W. , J.e., H. R., & Rietveld, G. (2022). Multi-Physical Design of a Wave Spring Connector for a Highly-Reliable GaN Power Module. In 2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC) (pp. 290-295). Article 9959435 IEEE. https://doi.org/10.1109/PEAC56338.2022.9959435
Annema, A. J. , & Hueting, R. (2021). Optocoupling in CMOS: Workshop Session "Devices and Circuits for Electro-Optics". IEEE 47th European Solid-State Circuits Conference 2021, fully virtual, Milan, Italy.
Vermeer, M. L. , Hueting, R. J. E., Pirro, L., Hoentschel, J. , & Schmitz, J. (2021). Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current. IEEE Transactions on Electron Devices, 68(2), 497-502. Article 9305941. https://doi.org/10.1109/TED.2020.3043223
Zhou, R. , Li, L., Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). Article 9170173 (International Symposium on Power Semiconductor Devices and ICs (ISPSD); Vol. 2020). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173

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Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré (gebouwnr. 15), kamer C2613
Hallenweg 21
7522NH  Enschede

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Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré  C2613
Postbus 217
7500 AE Enschede

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