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dr.ir. R.J.E. Hueting (Ray)

Universitair hoofddocent

Expertises

Engineering & Materials Science
Diodes
Ferroelectric Materials
Lead Zirconate Titanate
Light Emitting Diodes
Silicon
Chemistry
Simulation
Physics & Astronomy
Avalanches
Light Emitting Diodes

Publicaties

Recent
Annema, A. J. , & Hueting, R. (2021). Optocoupling in CMOS: Workshop Session "Devices and Circuits for Electro-Optics". IEEE 47th European Solid-State Circuits Conference 2021, fully virtual, Milan, Italy.
Vermeer, M. L. , Hueting, R. J. E., Pirro, L., Hoentschel, J. , & Schmitz, J. (2021). Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current. IEEE Transactions on Electron Devices, 68(2), 497-502. [9305941]. https://doi.org/10.1109/TED.2020.3043223
Zhou, R. , Li, L. , Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2020-September). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173
Gupta, G., Mema, F. , & Hueting, R. (2020). InAs Electron-Hole Bilayer LED. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) [9041897] IEEE and IEEE Electron Device Society. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041897

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Contactgegevens

Bezoekadres

Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré (gebouwnr. 15), kamer C2613
Hallenweg 23
7522NH  Enschede

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Postadres

Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré  C2613
Postbus 217
7500 AE Enschede

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