Carré

dr.ir. R.J.E. Hueting (Ray)

Universitair hoofddocent
EEMCS-EE-PE
Carré C2613
r.j.e.hueting@utwente.nl
+31534892754
Visitekaartje

Expertises

  • Material Science

    • Devices
    • Silicon
    • Transistor
    • Diode

  • Physics

    • Avalanche
    • Electric Potential

  • Engineering

    • Light-Emitting Diode
    • Metal-Oxide-Semiconductor Field-Effect Transistor

Organisaties

Publicaties

2026

Dynamic effects in silicon power MOSFETs (2026)[Thesis › PhD Thesis - Research UT, graduation UT]. University of Twente. Tambone, R.https://doi.org/10.3990/1.9789036570596

2025

A Double-Sided Cooling SiC Power Module with Pressure Contact Packaging (2025)IEEE Journal of Emerging and Selected Topics in Power Electronics, 13(5), 5713-5722. Article 0b000064941030c9. Wang, L., Wang, W., Zeng, K., Zhang, R., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/JESTPE.2025.3580428Accumulation-mode SiC Trench MOSFET (2025)In 2025 17th International Seminar on Power Semiconductors (ISPS) (pp. 1-7) (International Seminar on Power Semiconductors (ISPS); Vol. 2025). IEEE. Abnavi, H., Steenge, C., Dulfer, S. D., Berenschot, E. J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/ISPS65707.2025.11189975Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs (2025)Journal of the Electron Devices Society, 13, 516-523. Zhou, R., Gravesteijn, D. J. & Hueting, R. J. E.https://doi.org/10.1109/JEDS.2025.3577260Thermal Shock Reliability of Silver-Sintered Bonding of Metal-Plated Aluminum Surfaces (2025)IEEE transactions on device and materials reliability, 25(2), 203-211. Wang, L., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/TDMR.2025.3554369Behavior of Split-Gate Trench MOSFETs in Critical Conditions Caused by Distributed Effects (2025)IEEE Transactions on Electron Devices, 72(6), 3068-3075. Tambone, R., Ferrara, A., Magrini, F. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3564257Design and Fabrication of a Ceramic Substrate-Embedded SiC Power Module (2025)IEEE Transactions on Components, Packaging and Manufacturing Technology, 15(5), 938-948. Wang, L., Deng, J., Zeng, K., Cheng, H., Wu, Q., Lin, J., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/TCPMT.2025.3538658Impact of the collector structure on the performance of the insulated gate bipolar transistor (2025)Microelectronics, 159. Article 106651. van Zoeren, J., Gupta, G., Boksteen, B., Nanver, L. K. & Hueting, R. J. E.https://doi.org/10.1016/j.mejo.2025.106651A New Silicon Accumulation-Mode Trench Bidirectional Switch (2025)IEEE Transactions on Electron Devices, 72(4), 1900-1906. Abnavi, H., Steenge, C., Berenschot, J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3546582Thermo-mechanical Design of Heterogeneous Integrated Wide Bandgap Power Modules (2025)[Thesis › PhD Thesis - Research UT, graduation UT]. University of Twente. Wang, L.https://doi.org/10.3990/1.9789036565127

Onderzoeksprofielen

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