Carré

dr.ir. R.J.E. Hueting (Ray)

Universitair hoofddocent
EEMCS-EE-PE
Carré C2613
r.j.e.hueting@utwente.nl
+31534892754
Visitekaartje

Expertises

  • Material Science

    • Silicon
    • Devices
    • Transistor
    • Diode

  • Physics

    • Avalanche
    • Electric Potential

  • Engineering

    • Light-Emitting Diode
    • Metal-Oxide-Semiconductor Field-Effect Transistor

Organisaties

Publicaties

2026

Comparative study of the electrical, thermal, and reliability behavior of pressure contact technology on SiC chips (2026)Materials science in semiconductor processing, 205. Article 110394. Wang, L., Gao, C., Wang, W., Li, X., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1016/j.mssp.2025.110394Dynamic effects in silicon power MOSFETs (2026)[Thesis › PhD Thesis - Research UT, graduation UT]. University of Twente. Tambone, R.https://doi.org/10.3990/1.9789036570596

2025

A Double-Sided Cooling SiC Power Module with Pressure Contact Packaging (2025)IEEE Journal of Emerging and Selected Topics in Power Electronics, 13(5), 5713-5722. Article 0b000064941030c9. Wang, L., Wang, W., Zeng, K., Zhang, R., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/JESTPE.2025.3580428Accumulation-mode SiC Trench MOSFET (2025)In 2025 17th International Seminar on Power Semiconductors (ISPS) (pp. 1-7). IEEE. Abnavi, H., Steenge, C., Dulfer, S. D., Berenschot, E. J. W., Tas, N. R. & Hueting, R. J. E.https://doi.org/10.1109/ISPS65707.2025.11189975Current Sharing in Trench MOSFETs During Fast Switching Transients (2025)In Proceedings of the 37th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2025 (pp. 69-72) (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2025). IEEE. Tambone, R., Ferrara, A., Magrini, F. & Hueting, R. J. E.https://doi.org/10.23919/ISPSD62843.2025.11117282Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs (2025)Journal of the Electron Devices Society, 13, 516-523. Zhou, R., Gravesteijn, D. J. & Hueting, R. J. E.https://doi.org/10.1109/JEDS.2025.3577260Thermal Shock Reliability of Silver-Sintered Bonding of Metal-Plated Aluminum Surfaces (2025)IEEE transactions on device and materials reliability, 25(2), 203-211. Wang, L., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/TDMR.2025.3554369Behavior of Split-Gate Trench MOSFETs in Critical Conditions Caused by Distributed Effects (2025)IEEE Transactions on Electron Devices, 72(6), 3068-3075. Tambone, R., Ferrara, A., Magrini, F. & Hueting, R. J. E.https://doi.org/10.1109/TED.2025.3564257Design and Fabrication of a Ceramic Substrate-Embedded SiC Power Module (2025)IEEE Transactions on Components, Packaging and Manufacturing Technology, 15(5), 938-948. Wang, L., Deng, J., Zeng, K., Cheng, H., Wu, Q., Lin, J., Rietveld, G. & Hueting, R. J. E.https://doi.org/10.1109/TCPMT.2025.3538658Impact of the collector structure on the performance of the insulated gate bipolar transistor (2025)Microelectronics, 159. Article 106651. van Zoeren, J., Gupta, G., Boksteen, B., Nanver, L. K. & Hueting, R. J. E.https://doi.org/10.1016/j.mejo.2025.106651

Onderzoeksprofielen

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