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Light Emitting Diodes
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Puliyankot, V., Piccolo, G., Hueting, R. J. E., & Schmitz, J. (2018). Towards GHz Switching in SOI Light Emitting Diodes. IEEE transactions on electron devices. DOI: 10.1109/TED.2018.2866517
Gupta, G., Banerjee, S., Dutta, S., Aarnink, A. A. I., Schmitz, J., Kovalgin, A. Y., & Hueting, R. J. E. (2018). Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes. Journal of applied physics, 124(8), [084503]. DOI: 10.1063/1.5041089
Agarwal, V., Annema, A. J., Dutta, S., Hueting, R. J. E., Nanver, L. K., & Nauta, B. (2018). Random telegraph signal phenomena in ultra shallow p+n silicon avalanche diodes. Journal of the Electron Devices Society, 6(1), 642-652. DOI: 10.1109/JEDS.2018.2835153
Gupta, G., Dutta, S., Banerjee, S., & Hueting, R. J. E. (2018). Minority Carrier Injection in High-Barrier Si-Schottky Diodes. IEEE transactions on electron devices, 65(4), 1276-1282. DOI: 10.1109/TED.2018.2807926
Li, L., Liao, Z., Gauquelin, N., Nguyen, M. D., Hueting, R. J. E., Gravesteijn, D. J., ... Rijnders, G. (2018). Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate. Advanced materials interfaces, 5(2), [1700921]. DOI: 10.1002/admi.201700921
Hajlasz, M., Donkers, J. J. T. M., Pandey, S., Hurkx, F., Hueting, R. J. E., & Gravesteijn, D. J. (2017). Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes. IEEE transactions on electron devices, 64(10), 4050-4056. [8019820]. DOI: 10.1109/TED.2017.2742991
Agarwal, V. V., Dutta, S., Annema, A. J., Hueting, R. J. E., Steeneken, P. G., & Nauta, B. (2017). Low power wide spectrum optical transmitter using avalanche mode LEDs in SOI CMOS technology. Optics express, 25(15), 16981-16995. DOI: 10.1364/OE.25.016981
Gupta, G., Rajasekharan, B., & Hueting, R. J. E. (2017). Electrostatic Doping in Semiconductor Devices. IEEE transactions on electron devices, 64(8), 3044-3055. DOI: 10.1109/TED.2017.2712761
Dutta, S., Wienk, G. J. M., Hueting, R. J. E., Schmitz, J., & Annema, A. J. (2017). Optical Power Efficiency Versus Breakdown Voltage of Avalanche-Mode Silicon LEDs in CMOS. IEEE electron device letters, 38(7), 898-901. DOI: 10.1109/LED.2017.2701505
Dutta, S., Steeneken, P. G., Agarwal, V. V., Schmitz, J., Annema, A. J., & Hueting, R. J. E. (2017). The avalanche-mode superjunction LED. IEEE transactions on electron devices, 64(4), 1612-1618. DOI: 10.1109/TED.2017.2669645
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Universiteit Twente
Faculteit Elektrotechniek, Wiskunde en Informatica
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C2613
Postbus 217
7500 AE Enschede