Expertises
Engineering & Materials Science
# Buffer Layers
# Ferroelectric Materials
# High Electron Mobility Transistors
# Lead Zirconate Titanate
# Magnesia
# Monolayers
# Polarization
# Two Dimensional Electron Gas
Verbonden aan
Publicaties
Recent
Zhou, R.
, Li, L.
, Zhao, W.
, Liao, Z.
, Nguyen, M. D.
, Nunnenkamp, M.
, Houwman, E. P.
, Koster, G.
, Rijnders, A. J. H. M.
, Gravesteijn, D. J.
, & Hueting, R. J. E. (2020).
Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In
Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2020-September). IEEE.
https://doi.org/10.1109/ISPSD46842.2020.9170173
Contactgegevens
Bezoekadres
Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré
(gebouwnr. 15), kamer C2732
Hallenweg 23
7522NH Enschede
Postadres
Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré
C2732
Postbus 217
7500 AE Enschede