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R. Zhou MSc (Ran)

Expertises

Engineering & Materials Science
Buffer Layers
Ferroelectric Materials
High Electron Mobility Transistors
Lead Zirconate Titanate
Magnesia
Monolayers
Polarization
Two Dimensional Electron Gas

Publicaties

Recent
Zhou, R. , Li, L. , Zhao, W. , Liao, Z. , Nguyen, M. D. , Nunnenkamp, M. , Houwman, E. P. , Koster, G. , Rijnders, A. J. H. M. , Gravesteijn, D. J. , & Hueting, R. J. E. (2020). Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors. In Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 (pp. 329-332). [9170173] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2020-September). IEEE. https://doi.org/10.1109/ISPSD46842.2020.9170173

Contactgegevens

Bezoekadres

Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré (gebouwnr. 15), kamer C2732
Hallenweg 23
7522NH  Enschede

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Postadres

Universiteit Twente
Faculty of Electrical Engineering, Mathematics and Computer Science
Carré  C2732
Postbus 217
7500 AE Enschede